IJM014 Optoelectronics Characteristics of Multilayer SiC/SiO2 and SiO2/SiC Structures Prepared by DC Reactive Sputtering

Abstract

In this work, nanostructured SiO₂ thin films were deposited on glass substrates using DC reactive magnetron sputtering technique. Gas mixtures of argon and oxygen at different mixing ratios were used to synthesize SiO₂ nanoparticles. A transition from amorphous to partially crystalline phases was revealed as the oxygen ratio increased, indicating enhanced crystallinity under oxygen-rich conditions. The particle size decreased with higher oxygen content, suggesting improved oxidation and limited grain growth. Smoother surfaces were produced at intermediate gas ratios, with the lowest RMS roughness observed at an Ar:O₂ ratio of 70:30. The film deposited at a 50:50 ratio exhibited the highest absorbance in the visible range (400–600 nm), making it promising for optoelectronic applications. The results confirm that the Ar:O₂ gas ratio plays a critical role in tuning the structural and optical properties of SiO₂ nanostructured thin films.