Electronic Properties of Gallium Nitride Structure Using Density Functional Theory

Abstract

In this work, the density functional theory was used to determine the electronic and related properties of gallium nitride. The results of this work include electronic energy band gap at room temperature as the energy band gap increases with size. It was found that the bond length is within the distribution range. Tetrahedral and dihedral angles approach values of bulk gallium nitride up to higher structural configurations. The density of energy states was varied from approximately single levels to band structure.