Characteristics of NiO-Doped TeO Thin Films Prepared by Pulsed-Laser Deposition

Abstract

The influence of doping level of tellurium oxide films with different amounts of NiO additives (5, 10, 15 and 20%) on structural, optical, and electrical properties is investigated. The films were prepared by pulsed-laser deposition method. The Hall effect measurements show an increase in the conductivity with increase the NiO ratio and transfer the type of charge carriers from n to p-type with 20% NiO. The H2S sensing properties are influenced by the NiO ratio in the TeO films as well as the operation temperature. The TeO sensor loaded with 10% NiO is extremely sensitive to H2S and the best operation temperature is 50°C, and exhibits fast response speed of 7 s and recovery time of 20 s for trace level (10 ppm) H2S gas detection.