Characteristics of Tin Oxide Nanostructures Deposited on Porous Silicon Substrates

Abstract

In this work, nanostructured Sn₂O₃ thin films with different Cu₂O content (2-10 at.%) were prepared by pulsed-laser deposition (PLD) method. The film samples with 2, 4, 6, 8 and 10 at.% of Cu₂O showed Sn₂O₃ peaks of wurtzite structure. We have studied the operation temperature of gas sensors fabricated from the prepared samples at different etching times (5-60 min) and different environment temperatures (50-350°C) and found that the maximum sensitivity was about 79% for porous silicon prepared after etching time of 10 min.