Plasma-Induced Growth of Silicon Carbide on Silicon Substrate for Heterojunction Fabrication

Abstract

In this work, p-type silicon substrates were etched and coated with graphite paste to form layers of n-type silicon carbide by plasma-induced bonding technique. The structures and morphology of these structures were introduced by x-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). These tests confirmed the formation of nanostructured SiC layers on the etched Si substrates. Electrical characteristics showed that the formed n-SiC/p-Si anisotype heterojunction has an ideality factor of 0.45 and the built-in potential was measured to be 2.6V. This technique is reasonably efficient, low-cost and reliable to fabricate heterojunctions from nanostructured compound semiconductors on silicon substrates.