Fabrication and Optoelectronic Characteristics of CdSe/Si Heterojunctions by Plasma-Induced Bonding

Abstract

In this work, the characteristics of the CdSe/Si structure produced by plasma-induced bonding technique were studied. The produced structure was an asymmetric heterojunction consisting of n-type CdSe on a p-type silicon substrate. The Si substrate and CdSe sample were bonded by subjecting them to the plasma formed between two electrodes. The measurements included the structural and electrical characteristics. The built-in potential of the produced heterojunction is about 0.9 eV with typical spectral responsivity within the range 300-900 nm. With dark current of 1 mA, maximum forward current of 136 mA and ideality factor lower than unity, the results explained better characteristics than those of the same heterojunction produced by thermal evaporation technique.