Terahertz Lasing Using Optically Excited Neutral Donor Centres Embedded in Crystalline Silicon

Abstract

In this work, the results demonstrate with the evidence the possibility to get the THz lasing using optically excited neutral donor centres embedded in crystalline silicon. The physical principles are clear and on the whole the results of the theoretical calculations taking into account both the intravalley and intervalley phonon-assisted captured carrier relaxation are in a good qualitative agreement with the experimental data, particularly for the Si:P laser. At the same time the experiment with Si:Bi revealed an unexpected delay (3´10^-7 s) in the temporal behavior of the stimulated emission.