Effects of Annealing and Substrate Temperatures on Dielectric Properties of CuInGaS2 Structures Prepared by Quenching-Assisted Vacuum Coating Technique

Abstract

In this work, the effect of substrate temperature on some physical properties of CuInGaS2 thin films was studied. The frequency and temperature dependencies upon AC conductivity were studied in the range 100Hz-10MHz and temperature range of 30-180°C. The AC activation energy was found to increase with increasing substrate temperature from 20 to 150°C and to decrease with increasing frequency from 100 Hz to 100 MHz. A nonsystematic sequence was shown with the increment of substrate temperature. According to these results, there is a strong relation between the preparation or substrate temperature and heat treatment as they have sufficient effects on the physical properties of the quaternary compound thin films.