Simulation Study on Current Gain Improvement at High Collector Current Densities for CuO/TiO2 Heterostructure Transistors

Abstract

An NPN Si/SiGe/SiGe Graded Heterojunction Bipolar Transistor (SiGe GHBT) has been compared with contemporary NPN Si/SiGe/Si Double Heterojunction Bipolar Transistor (SiGe DHBT) for current gain performance at high collector current densities, using a 2-dimensional MEDICI device simulator. The analysis predicts that the base-collector homojunction of the SiGe GHBT structure is responsible for improved current gain at high collector current density in comparison with the conventional SiGe DHBT and provides the option of operation at higher collector current densities.