Diffusion and Electrical Characteristics of Phosphorous-Doped Silicon Using Excimer Laser Pulses

Abstract

In this work, p-type silicon samples were doped with phosphorus using pulses of an ArF excimer laser. In order to separate the effects of the gas and the adsorbed layers on doping characteristics, experiments were performed using two different procedures; doping in POCl₃ ambient and doping using only adsorbed layers of POCl₃ on the sample surface. The lowest sheet resistance was obtained for samples doped in POCl₃ ambient. Activation energy for phosphorus evaporation from the silicon surface was determined. As well, electrical properties such as conductivity, carrier concentration and mobility were studied for the prepared samples at laser fluence of 2.5 mJ/cm². Results presented could be considered successfully to develop semiconductor-doping using ultraviolet-wavelength lasers.