Suppression of Hysteresis in Amorphous IGZO Thin-Film Transistors via Defect State Passivation. IRAQI JOURNAL OF MATERIALS, [S. l.], v. 5, n. 4, p. 211–214, 2026. DOI: 10.2022/zsk9bh41. Disponível em: https://ijmaterials.com/index.php/ijm/article/view/152. Acesso em: 15 oct. 2026.